Institute of High Pressure Physics of the Polish Academy of Sciences
The Institute of High Pressure Physics of the Polish Academy of Sciences (IHP PAN) was established in 1972 as a result of the separation of an independent laboratory headed by Prof. Sylwester Porowski from the Institute of Physics of the Polish Academy of Sciences. Semiconductor physics is the dominant field of research, which currently focuses on III-V nitrides.
Areas
physics, materials engineering
Photo: Tomasz Sochacki / IWC PAN
The world’s first GaN crystals were obtained under high pressure at the IWC PAN. This was the impetus for the creation of the modern GaN Physics Center, where GaN crystal growth, epitaxial quantum structures, and optoelectronic and electronic devices are studied. In addition, the Institute is developing nanotechnologies based on solvo-thermal synthesis and extreme plastic deformation. Research is also being conducted in the field of soft matter and glass physics. The latest area of research is terahertz radiation. This research is carried out at the International Research Agenda (MAB)-CENTERA.
Photo: Tomasz Sochacki / IWC PAN
Over 120 researchers conduct fascinating research at the IWC PAN, using high pressure as an important physical variable in 15 laboratories. Their work is of the highest standard, which translates into, among other things, one of the highest numbers of citations in Poland. The Institute designs unique scientific equipment that is used in many laboratories around the world. The Institute is interested in commercializing its scientific results (six active spin-offs have been created here).